IRFU9110 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRFU9110
Manufacturer	Harris Corporation
Other Part Numbers	2156-IRFU9110-ND 2156-IRFU9110 HARHARIRFU9110
Description	3.1A 100V 1.200 OHM P-CHANNEL
Detailed Description	P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Harris Corporation
Series
Packaging		Bulk
Part Status		Active
Package / Case		TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		P-Channel
Current - Continuous Drain (Id) @ 25°C		3.1A (Tc)
Rds On (Max) @ Id, Vgs		1.2Ohm @ 1.9A, 10V
Power Dissipation (Max)		2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id		4V @ 250µA
Supplier Device Package		TO-251AA
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		100 V
Gate Charge (Qg) (Max) @ Vgs		8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		200 pF @ 25 V

RESOURCE TYPE		LINK

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		0000.00.0000
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS non-compliant

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