IXTX110N20L2 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IXTX110N20L2
Manufacturer	Littelfuse / IXYS RF
Other Part Numbers	IXTX110N20L2-ND
Description	MOSFET N-CH 200V 110A PLUS247-3
Detailed Description	N-Channel 200 V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Manufacturer Standard Lead Time	43 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Littelfuse / IXYS RF
Series		Linear L2™
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3 Variant
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		110A (Tc)
Rds On (Max) @ Id, Vgs		24mOhm @ 55A, 10V
Power Dissipation (Max)		960W (Tc)
Vgs(th) (Max) @ Id		4.5V @ 3mA
Supplier Device Package		PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		200 V
Gate Charge (Qg) (Max) @ Vgs		500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		23000 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		IXTX110N20L2

ATTRIBUTE		DESCRIPTION
California Prop 65		California Prop 65 Information
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Can ship immediately.

QUANTITY

PACKAGING	QUANTITY	UNIT PRICE	EXT PRICE
Tube	1	$37.00	$37.00
Total Amount: $37.00