NDS356P _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	NDS356P
Manufacturer	Sanyo Semiconductor/onsemi
Other Part Numbers	NDS356PTR-ND NDS356PCT-ND NDS356PCT NDS356PCT-NDR NDS356PTR-NDR NDS356PTR
Description	MOSFET P-CH 20V 1.1A SUPERSOT3
Detailed Description	P-Channel 20 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Sanyo Semiconductor/onsemi
Series
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Obsolete
Package / Case		TO-236-3, SC-59, SOT-23-3
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		P-Channel
Current - Continuous Drain (Id) @ 25°C		1.1A (Ta)
Rds On (Max) @ Id, Vgs		210mOhm @ 1.3A, 10V
Power Dissipation (Max)		500mW (Ta)
Vgs(th) (Max) @ Id		2.5V @ 250µA
Supplier Device Package		SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)		4.5V, 10V
Vgs (Max)		±12V
Drain to Source Voltage (Vdss)		20 V
Gate Charge (Qg) (Max) @ Vgs		5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds		180 pF @ 10 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.21.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected

This product is no longer manufactured.