TK100E06N1,S1X _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	TK100E06N1,S1X
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Other Part Numbers	TK100E06N1S1X-ND TK100E06N1,S1X(S TK100E06N1S1X
Description	MOSFET N CH 60V 100A TO-220
Detailed Description	N-Channel 60 V 100A (Ta) 255W (Tc) Through Hole TO-220
Manufacturer Standard Lead Time	24 weeks

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Toshiba Electronic Devices and Storage Corporation
Series		U-MOSVIII-H
Packaging		Tube
Part Status		Active
Package / Case		TO-220-3
Mounting Type		Through Hole
Operating Temperature		150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		100A (Ta)
Rds On (Max) @ Id, Vgs		2.3mOhm @ 50A, 10V
Power Dissipation (Max)		255W (Tc)
Vgs(th) (Max) @ Id		4V @ 1mA
Supplier Device Package		TO-220
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		60 V
Gate Charge (Qg) (Max) @ Vgs		140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		10500 pF @ 30 V

RESOURCE TYPE		LINK

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

Can ship immediately.

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