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Single Diodes
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Reverse Recovery Time (trr)
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Capacitance @ Vr, F
Current - Average Rectified (Io)
Supplier Device Package
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1,881 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Speed Reverse Recovery Time (trr) Technology Capacitance @ Vr, F Current - Average Rectified (Io) Supplier Device Package Operating Temperature - Junction Grade Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Qualification
BYV60W-600PQ
BYV60W-600PQ
DIODE GEN PURP 600V 60A TO247-2
WeEn Semiconductors Co., Ltd
4,373
In Stock
1 : $3.24
30 : $77.10
120 : $264.00
510 : $999.60
1,020 : $1,703.40
2,010 : $3,175.80
5,010 : $7,565.10
Tube
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 TO-247-2 Through Hole Fast Recovery =< 500ns, > 200mA (Io) 55 ns Standard - 60A TO-247-2 175°C (Max) - 600 V 2 V @ 60 A 10 µA @ 600 V -
BYC15-600,127
BYC15-600,127
DIODE GEN PURP 500V 15A TO220AC
WeEn Semiconductors Co., Ltd
6,257
In Stock
1 : $1.47
50 : $59.00
100 : $93.00
500 : $395.00
1,000 : $640.00
2,000 : $1,220.00
5,000 : $2,900.00
10,000 : $5,500.00
Tube
Tube
Active
 TO-220-2 Through Hole Fast Recovery =< 500ns, > 200mA (Io) 55 ns Standard - 15A TO-220AC 150°C (Max) - 500 V 2.9 V @ 15 A 200 µA @ 600 V -
WNSC6D20650WQ
WNSC6D20650WQ
DIODE SIL CARB 650V 20A TO247-2
WeEn Semiconductors Co., Ltd
501
In Stock
1 : $6.49
30 : $155.40
120 : $556.80
Tube
Tube
Active
 TO-247-2 Through Hole No Recovery Time > 500mA (Io) 0 ns SiC (Silicon Carbide) Schottky 1200pF @ 1V, 1MHz 20A TO-247-2 175°C - 650 V 1.4 V @ 20 A 100 µA @ 650 V -
BYC75W-600PT2Q
BYC75W-600PT2Q
DIODE GEN PURP 600V 75A TO247-2
WeEn Semiconductors Co., Ltd
548
In Stock
1 : $2.80
30 : $66.60
120 : $228.00
510 : $861.90
1,020 : $1,479.00
2,010 : $2,733.60
5,010 : $6,563.10
Tube
Tube
Active
 TO-247-2 Through Hole Fast Recovery =< 500ns, > 200mA (Io) 50 ns Standard - 75A TO-247-2 175°C - 600 V 2.75 V @ 75 A 10 µA @ 600 V -
BYC20DX-600PQ
BYC20DX-600PQ
DIODE GEN PURP 600V 20A TO220F
WeEn Semiconductors Co., Ltd
6,000
In Stock
1 : $1.70
50 : $68.50
100 : $113.00
500 : $475.00
1,000 : $810.00
2,000 : $1,540.00
5,000 : $3,700.00
10,000 : $7,200.00
Tube
Tube
Active
 TO-220-2 Full Pack, Isolated Tab Through Hole Fast Recovery =< 500ns, > 200mA (Io) 20 ns Standard - 20A TO-220F 175°C (Max) - 600 V 2.9 V @ 20 A 10 µA @ 600 V -
BYC15X-600PQ
BYC15X-600PQ
DIODE GEN PURP 600V 15A TO220F
WeEn Semiconductors Co., Ltd
4,961
In Stock
1 : $1.25
50 : $50.00
100 : $79.00
500 : $335.00
1,000 : $550.00
2,000 : $1,040.00
5,000 : $2,450.00
10,000 : $4,700.00
Tube
Tube
Active
 TO-220-2 Full Pack, Isolated Tab Through Hole Fast Recovery =< 500ns, > 200mA (Io) 18 ns Standard - 15A TO-220F 175°C (Max) - 600 V 3.2 V @ 15 A 10 µA @ 600 V -
BYC15-600PQ
BYC15-600PQ
DIODE GEN PURP 600V 15A TO220AC
WeEn Semiconductors Co., Ltd
50
In Stock
1 : $1.21
50 : $48.50
100 : $77.00
500 : $325.00
1,000 : $530.00
2,000 : $1,000.00
5,000 : $2,400.00
10,000 : $4,500.00
Tube
Tube
Active
 TO-220-2 Through Hole Fast Recovery =< 500ns, > 200mA (Io) 18 ns Standard - 15A TO-220AC 175°C (Max) - 600 V 3.2 V @ 15 A 10 µA @ 600 V -
WNSC2D201200WQ
WNSC2D201200WQ
DIODE SIL CARB 1.2KV 20A TO247-2
WeEn Semiconductors Co., Ltd
2,268
In Stock
1 : $8.20
10 : $70.30
100 : $586.00
600 : $3,102.00
1,200 : $5,580.00
Tube
Tube
Active
 TO-247-2 Through Hole No Recovery Time > 500mA (Io) 0 ns SiC (Silicon Carbide) Schottky 845pF @ 1V, 1MHz 20A TO-247-2 175°C - 1200 V 1.8 V @ 20 A 200 µA @ 1200 V -
WNSC2D101200WQ
WNSC2D101200WQ
DIODE SIL CARB 1.2KV 10A TO247-2
WeEn Semiconductors Co., Ltd
2,333
In Stock
1 : $4.56
10 : $38.30
100 : $310.00
500 : $1,380.00
1,000 : $2,360.00
2,000 : $4,440.00
Tube
Tube
Active
 TO-247-2 Through Hole No Recovery Time > 500mA (Io) 0 ns SiC (Silicon Carbide) Schottky 490pF @ 1V, 1MHz 10A TO-247-2 175°C - 1200 V 1.65 V @ 10 A 110 µA @ 1200 V -
BYC30WT-600PQ
BYC30WT-600PQ
DIODE GEN PURP 600V 30A TO247-3
WeEn Semiconductors Co., Ltd
2,790
In Stock
1 : $1.73
30 : $41.70
120 : $136.80
510 : $525.30
Tube
Tube
Active
 TO-247-3 Through Hole Fast Recovery =< 500ns, > 200mA (Io) 22 ns Standard - 30A TO-247-3 175°C (Max) - 600 V 2.75 V @ 30 A 10 µA @ 600 V -